NTE645 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: R-DUAL CMN ANODE 600V 16A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bag
| Anzahl | Preis |
|---|---|
| 3+ | 6.25 EUR |
| 10+ | 5.93 EUR |
| 20+ | 5.63 EUR |
| 50+ | 5.32 EUR |
| 100+ | 5.19 EUR |
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Technische Details NTE645 NTE Electronics, Inc
Description: R-DUAL CMN ANODE 600V 16A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-220, Current - Average Rectified (Io) (per Diode): 8A, Diode Configuration: 1 Pair Common Anode, Technology: Standard, Reverse Recovery Time (trr): 250 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bag.