NTE648 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: DIODE SCHOTTKY 200V 3A DO201AD
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bag
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.94 EUR |
| 40+ | 0.89 EUR |
| 60+ | 0.84 EUR |
| 80+ | 0.8 EUR |
| 100+ | 0.79 EUR |
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Technische Details NTE648 NTE Electronics, Inc
Description: DIODE SCHOTTKY 200V 3A DO201AD, Current - Reverse Leakage @ Vr: 200 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: DO-201AD, Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Bag.
Weitere Produktangebote NTE648 nach Preis ab 2.44 EUR bis 2.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| NTE648 | NTE Electronics, Inc. |
Schottky Barrier Silicon Rectifier Low Voltage, High Frequency DO-201AD Type Package |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTE648 |
|
Hersteller: NTE Electronics, Inc.
Schottky Barrier Silicon Rectifier Low Voltage, High Frequency DO-201AD Type Package
Schottky Barrier Silicon Rectifier Low Voltage, High Frequency DO-201AD Type Package
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 2.44 EUR |