NTF6P02T3G ON Semiconductor
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.77 EUR |
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Technische Details NTF6P02T3G ON Semiconductor
Description: MOSFET P-CH 20V 10A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V, Power Dissipation (Max): 8.3W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-223 (TO-261), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V.
Weitere Produktangebote NTF6P02T3G nach Preis ab 0.78 EUR bis 2.11 EUR
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NTF6P02T3G | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 20V 10A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTF6P02T3G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 10A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V Power Dissipation (Max): 8.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223 (TO-261) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTF6P02T3G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 10A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTF6P02T3G | Hersteller : onsemi |
MOSFETs -20V -6A P-Channel |
auf Bestellung 129647 Stücke: Lieferzeit 10-14 Tag (e) |
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NTF6P02T3G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 10A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V Power Dissipation (Max): 8.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223 (TO-261) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V |
auf Bestellung 12498 Stücke: Lieferzeit 10-14 Tag (e) |
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NTF6P02T3G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 10A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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NTF6P02T3G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 10A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTF6P02T3G************ |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTF6P02T3G | Hersteller : ON |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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NTF6P02T3G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 10A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |