Produkte > ONSEMI > NTF6P02T3G
NTF6P02T3G

NTF6P02T3G onsemi

ntf6p02t3-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 20V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Power Dissipation (Max): 8.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
auf Bestellung 43117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.9 EUR
8000+ 0.86 EUR
12000+ 0.82 EUR
Mindestbestellmenge: 4000
Produktrezensionen
Produktbewertung abgeben

Technische Details NTF6P02T3G onsemi

Description: MOSFET P-CH 20V 10A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V, Power Dissipation (Max): 8.3W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-223 (TO-261), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V.

Weitere Produktangebote NTF6P02T3G nach Preis ab 0.9 EUR bis 2.18 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NTF6P02T3G NTF6P02T3G Hersteller : onsemi NTF6P02T3_D-2318808.pdf MOSFET -20V -6A P-Channel
auf Bestellung 107742 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.16 EUR
10+ 1.67 EUR
100+ 1.38 EUR
500+ 1.17 EUR
1000+ 0.96 EUR
2000+ 0.91 EUR
4000+ 0.9 EUR
Mindestbestellmenge: 2
NTF6P02T3G NTF6P02T3G Hersteller : onsemi ntf6p02t3-d.pdf Description: MOSFET P-CH 20V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Power Dissipation (Max): 8.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
auf Bestellung 43117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.18 EUR
10+ 1.78 EUR
100+ 1.39 EUR
500+ 1.18 EUR
1000+ 0.96 EUR
2000+ 0.9 EUR
Mindestbestellmenge: 9
NTF6P02T3G************
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
NTF6P02T3G Hersteller : ON ntf6p02t3-d.pdf
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
NTF6P02T3G NTF6P02T3G Hersteller : ON Semiconductor ntf6p02t3-d.pdf Trans MOSFET P-CH 20V 10A 4-Pin(3+Tab) SOT-223 T/R
Produkt ist nicht verfügbar