| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.62 EUR |
| 10+ | 1.4 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.69 EUR |
| 3000+ | 0.63 EUR |
| 6000+ | 0.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTGS3130NT1G onsemi
Description: ONSEMI - NTGS3130NT1G - Leistungs-MOSFET, n-Kanal, 20 V, 5.6 A, 0.019 ohm, TSOP, Oberflächenmontage, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20, Dauer-Drainstrom Id: 5.6, Qualifikation: -, MSL: MSL 1 - unbegrenzt, Verlustleistung Pd: 1.1, Gate-Source-Schwellenspannung, max.: 600, Verlustleistung: 1.1, Bauform - Transistor: TSOP, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 6, Produktpalette: -, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.019, Rds(on)-Prüfspannung: 4.5, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.019, SVHC: No SVHC (10-Jun-2022).
Weitere Produktangebote NTGS3130NT1G nach Preis ab 0.79 EUR bis 2.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTGS3130NT1G | onsemi |
 Description: MOSFET N-CH 20V 4.23A 6TSOPInput Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 846 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
| NTGS3130NT1G | ON Semiconductor |
|
auf Bestellung 21 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTGS3130NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 4.23A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 4.23A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 846 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.43 EUR |
| 14+ | 1.52 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.79 EUR |
| NTGS3130NT1G |
|
Hersteller: ON Semiconductor
auf Bestellung 21 Stücke:
Lieferzeit 21-28 Tag (e)