NTH4L030N120M3S onsemi
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.04 EUR |
| 30+ | 15.79 EUR |
| 60+ | 14.57 EUR |
| 120+ | 13.54 EUR |
| 510+ | 12.22 EUR |
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Technische Details NTH4L030N120M3S onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 73A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V, Power Dissipation (Max): 313W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 15mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V.
Weitere Produktangebote NTH4L030N120M3S
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| NTH4L030N120M3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 52A On-state resistance: 58mΩ Pulsed drain current: 193A Power dissipation: 156W Gate charge: 107nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -10...22V Kind of package: tube Case: TO247-4 Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NTH4L030N120M3S | ON Semiconductor |
Silicon Carbide (SiC) MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTH4L030N120M3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 52A
On-state resistance: 58mΩ
Pulsed drain current: 193A
Power dissipation: 156W
Gate charge: 107nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
Kind of package: tube
Case: TO247-4
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 52A
On-state resistance: 58mΩ
Pulsed drain current: 193A
Power dissipation: 156W
Gate charge: 107nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
Kind of package: tube
Case: TO247-4
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTH4L030N120M3S |
|
Hersteller: ON Semiconductor
Silicon Carbide (SiC) MOSFET
Silicon Carbide (SiC) MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH