NTHC5513T1G ON Semiconductor
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details NTHC5513T1G ON Semiconductor
Description: MOSFET N/P-CH 20V 2.9A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A, Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V, Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: ChipFET™, Part Status: Last Time Buy.
Weitere Produktangebote NTHC5513T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| NTHC5513T1G | Hersteller : ON |
 07+ SOT23-6 |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTHC5513T1G | Hersteller : ON |
09+ |
auf Bestellung 33018 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTHC5513T1G | Hersteller : ON |
SOT23-8 |
auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTHC5513T1G | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 20V 2.9A/2.2A 8-Pin Chip FET T/R |
Produkt ist nicht verfügbar |
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| NTHC5513T1G | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3.9/-3A Pulsed drain current: 12A Power dissipation: 2.1W Case: ChipFET Gate-source voltage: ±12V On-state resistance: 115/240mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTHC5513T1G | Hersteller : onsemi |
Description: MOSFET N/P-CH 20V 2.9A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
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NTHC5513T1G | Hersteller : onsemi |
Description: MOSFET N/P-CH 20V 2.9A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
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NTHC5513T1G | Hersteller : onsemi |
MOSFET 20V +3.9A/-3A Complementary |
Produkt ist nicht verfügbar |
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| NTHC5513T1G | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3.9/-3A Pulsed drain current: 12A Power dissipation: 2.1W Case: ChipFET Gate-source voltage: ±12V On-state resistance: 115/240mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |