Technische Details NTHD3100CT1 ON
Description: MOSFET N/P-CH 20V 2.9A CHIPFET, Supplier Device Package: ChipFET™, Vgs(th) (Max) @ Id: 1.2V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V, Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTHD3100CT1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NTHD3100CT1 | onsemi |
Description: MOSFET N/P-CH 20V 2.9A CHIPFETSupplier Device Package: ChipFET™ Vgs(th) (Max) @ Id: 1.2V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A Drain to Source Voltage (Vdss): 20V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NTHD3100CT1 | onsemi |
MOSFETs Complementary ChipFET Power MOSFET 20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTHD3100CT1 |
![]() |
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 2.9A CHIPFET
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 20V 2.9A CHIPFET
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHD3100CT1 |
![]() |
Hersteller: onsemi
MOSFETs Complementary ChipFET Power MOSFET 20V
MOSFETs Complementary ChipFET Power MOSFET 20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


