auf Bestellung 278 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.41 EUR |
| 10+ | 15.08 EUR |
| 120+ | 14.78 EUR |
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Technische Details NTHL040N65S3F onsemi
Description: MOSFET N-CH 650V 65A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5V @ 6.5mA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V.
Weitere Produktangebote NTHL040N65S3F nach Preis ab 14.26 EUR bis 26.29 EUR
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NTHL040N65S3F | Hersteller : onsemi |
 Description: MOSFET N-CH 650V 65A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 6.5mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V |
auf Bestellung 10707 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL040N65S3F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 65A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NTHL040N65S3F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 65A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NTHL040N65S3F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 65A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| NTHL040N65S3F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Gate charge: 158nC Kind of package: tube Drain current: 45A Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±30V Technology: SuperFET® Pulsed drain current: 162.5A Drain-source voltage: 650V On-state resistance: 40mΩ |
Produkt ist nicht verfügbar |