| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.27 EUR |
| 10+ | 17.95 EUR |
| 120+ | 16.54 EUR |
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Technische Details NTHL050N65S3HF onsemi
Description: MOSFET N-CH 650V 58A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V, Power Dissipation (Max): 378W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.7mA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5017 pF @ 400 V.
Weitere Produktangebote NTHL050N65S3HF nach Preis ab 16.22 EUR bis 30.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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NTHL050N65S3HF | onsemi |
 Description: MOSFET N-CH 650V 58A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V Power Dissipation (Max): 378W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.7mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5017 pF @ 400 V |
auf Bestellung 337 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTHL050N65S3HF | ON Semiconductor |
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auf Bestellung 225 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTHL050N65S3HF |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 58A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5017 pF @ 400 V
Description: MOSFET N-CH 650V 58A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5017 pF @ 400 V
auf Bestellung 337 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.32 EUR |
| 30+ | 18.73 EUR |
| 120+ | 16.22 EUR |
| NTHL050N65S3HF |
|
Hersteller: ON Semiconductor
auf Bestellung 225 Stücke:
Lieferzeit 21-28 Tag (e)