
NTHL050N65S3HF onsemi

Description: MOSFET N-CH 650V 58A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5017 pF @ 400 V
auf Bestellung 389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 19.73 EUR |
30+ | 13.01 EUR |
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Technische Details NTHL050N65S3HF onsemi
Description: MOSFET N-CH 650V 58A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V, Power Dissipation (Max): 378W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.7mA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5017 pF @ 400 V.
Weitere Produktangebote NTHL050N65S3HF nach Preis ab 13.94 EUR bis 19.73 EUR
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NTHL050N65S3HF | Hersteller : onsemi |
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auf Bestellung 2287 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL050N65S3HF | Hersteller : ON Semiconductor |
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auf Bestellung 225 Stücke: Lieferzeit 21-28 Tag (e) |
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NTHL050N65S3HF | Hersteller : ON Semiconductor |
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NTHL050N65S3HF | Hersteller : ON Semiconductor |
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NTHL050N65S3HF | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 37A; Idm: 145A; 378W; TO247 Type of transistor: N-MOSFET Power dissipation: 378W Case: TO247 Mounting: THT Gate charge: 125nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 145A Drain-source voltage: 650V Drain current: 37A On-state resistance: 41mΩ Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTHL050N65S3HF | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 37A; Idm: 145A; 378W; TO247 Type of transistor: N-MOSFET Power dissipation: 378W Case: TO247 Mounting: THT Gate charge: 125nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 145A Drain-source voltage: 650V Drain current: 37A On-state resistance: 41mΩ Polarisation: unipolar |
Produkt ist nicht verfügbar |