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Technische Details NTHL067N65S3H onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V, Power Dissipation (Max): 266W (Tc), Vgs(th) (Max) @ Id: 4V @ 3.9mA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V.
Weitere Produktangebote NTHL067N65S3H nach Preis ab 7.69 EUR bis 15.29 EUR
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NTHL067N65S3H | Hersteller : onsemi |
 Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 4V @ 3.9mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V |
auf Bestellung 371 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTHL067N65S3H | Hersteller : ON Semiconductor |
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auf Bestellung 380 Stücke: Lieferzeit 21-28 Tag (e) |