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NTHL120N60S5Z

NTHL120N60S5Z onsemi

nthl120n60s5z-d.pdf Hersteller: onsemi
MOSFET Power MOSFET, N-Channel, SUPERFET V, Easy Drive, 600 V, 28 A, 120 mohm, TO-247 Power MOSFET, N-Channel, SUPERFET V, Easy Drive, 600 V, 28 A, 120 mohm, TO-247
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Lieferzeit 108-112 Tag (e)
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10+ 8.73 EUR
25+ 8.24 EUR
100+ 7.06 EUR
250+ 6.67 EUR
450+ 6.27 EUR
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Technische Details NTHL120N60S5Z onsemi

Description: MOSFET N-CH 600V 22A TO3PN, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tj), Rds On (Max) @ Id, Vgs: 120mOhm @ 11.5A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.2mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2088 pF @ 400 V.

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NTHL120N60S5Z NTHL120N60S5Z Hersteller : onsemi nthl120n60s5z-d.pdf Description: MOSFET N-CH 600V 22A TO3PN
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
Rds On (Max) @ Id, Vgs: 120mOhm @ 11.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2088 pF @ 400 V
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