Technische Details NTHS5441T1G ON
Description: MOSFET P-CH 20V 3.9A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 5 V.
Weitere Produktangebote NTHS5441T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| NTHS5441T1G | Hersteller : ON |
 08+ SOP |
auf Bestellung 798 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTHS5441T1G | Hersteller : ON |
SOT23-8 |
auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTHS5441T1G | Hersteller : ON Semiconductor |
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auf Bestellung 884 Stücke: Lieferzeit 21-28 Tag (e) |
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NTHS5441T1G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 3.9A 8-Pin Chip FET T/R |
Produkt ist nicht verfügbar |
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NTHS5441T1G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 3.9A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 5 V |
Produkt ist nicht verfügbar |
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NTHS5441T1G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 3.9A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 5 V |
Produkt ist nicht verfügbar |
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NTHS5441T1G | Hersteller : onsemi |
MOSFETs -20V -5.3A P-Channel |
Produkt ist nicht verfügbar |