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NTJD4152PT2G

NTJD4152PT2G onsemi

ntjd4152p-d.pdf Hersteller: onsemi
Description: MOSFET 2P-CH 20V 0.88A SC88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.21 EUR
Mindestbestellmenge: 3000
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Technische Details NTJD4152PT2G onsemi

Description: MOSFET 2P-CH 20V 0.88A SC88-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 272mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 880mA, Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V, Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active.

Weitere Produktangebote NTJD4152PT2G nach Preis ab 0.16 EUR bis 0.76 EUR

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NTJD4152PT2G NTJD4152PT2G Hersteller : onsemi NTJD4152P_D-115296.pdf MOSFET PFET SC88 20V 88MA 2
auf Bestellung 12132 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.65 EUR
10+ 0.53 EUR
100+ 0.27 EUR
1000+ 0.21 EUR
3000+ 0.19 EUR
9000+ 0.17 EUR
24000+ 0.16 EUR
Mindestbestellmenge: 5
NTJD4152PT2G NTJD4152PT2G Hersteller : onsemi ntjd4152p-d.pdf Description: MOSFET 2P-CH 20V 0.88A SC88-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 5895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
29+ 0.61 EUR
100+ 0.41 EUR
500+ 0.31 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 24
NTJD4152PT2G Hersteller : ON Semiconductor ntjd4152p-d.pdf
auf Bestellung 2970 Stücke:
Lieferzeit 21-28 Tag (e)