
NTJS3151PT2G ON Semiconductor
auf Bestellung 99000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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3000+ | 0.18 EUR |
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Technische Details NTJS3151PT2G ON Semiconductor
Description: MOSFET P-CH 12V 2.7A SC88/SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V, Power Dissipation (Max): 625mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 100µA, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V.
Weitere Produktangebote NTJS3151PT2G nach Preis ab 0.18 EUR bis 0.88 EUR
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NTJS3151PT2G | Hersteller : ON Semiconductor |
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auf Bestellung 99000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJS3151PT2G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS3151PT2G | Hersteller : onsemi |
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auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS3151PT2G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS3151PT2G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NTJS3151PT2G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |