Technische Details NTK3134NT1H ON Semiconductor
Description: MOSFET N-CH 20V 0.89A SOT723, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 16 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±6V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: SOT-723, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 310mW (Ta), Rds On (Max) @ Id, Vgs: 350mOhm @ 890mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTK3134NT1H nach Preis ab 0.15 EUR bis 0.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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NTK3134NT1H | onsemi |
 Description: 0.75A, 20V, N-CHANNEL MOSFETPackaging: Bulk Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 890mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-723 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 16 V |
auf Bestellung 47115 Stücke: Lieferzeit 10-14 Tag (e) |
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NTK3134NT1H | ON Semiconductor |
MOSFET |
auf Bestellung 473 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
| NTK3134NT1H | ONSEMI |
Description: ONSEMI - NTK3134NT1H - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 47113 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTK3134NT1H |
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Hersteller: onsemi
Description: 0.75A, 20V, N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 890mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 16 V
Description: 0.75A, 20V, N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 890mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 16 V
auf Bestellung 47115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3806+ | 0.15 EUR |
| NTK3134NT1H |
|
Hersteller: ON Semiconductor
MOSFET
MOSFET
auf Bestellung 473 Stücke:
Lieferzeit 10-14 Tag (e)
| NTK3134NT1H |
|
Hersteller: ONSEMI
Description: ONSEMI - NTK3134NT1H - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - NTK3134NT1H - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 47113 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.2 EUR |