NTLJD2104PTBG onsemi
Hersteller: onsemiDescription: MOSFET 2P-CH 12V 2.4A 6WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1158+ | 0.44 EUR |
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Technische Details NTLJD2104PTBG onsemi
Description: MOSFET 2P-CH 12V 2.4A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 2.4A, Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V, Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 6-WDFN (2x2).
Weitere Produktangebote NTLJD2104PTBG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTLJD2104PTBG | Hersteller : ONSEMI |
Description: ONSEMI - NTLJD2104PTBG - NTLJD2104PTBG, SINGLE MOSFETS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTLJD2104PTBG | Hersteller : onsemi |
Description: MOSFET 2P-CH 12V 2.4A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.4A Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 6-WDFN (2x2) |
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