NTLJD2104PTBG onsemi
Hersteller: onsemi
Description: MOSFET 2P-CH 12V 2.4A 6WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
| Anzahl | Preis |
|---|---|
| 1158+ | 0.44 EUR |
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Technische Details NTLJD2104PTBG onsemi
Description: MOSFET 2P-CH 12V 2.4A 6WDFN, Supplier Device Package: 6-WDFN (2x2), Vgs(th) (Max) @ Id: 800mV @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 2.4A, Drain to Source Voltage (Vdss): 12V, Power - Max: 700mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTLJD2104PTBG | onsemi |
Description: MOSFET 2P-CH 12V 2.4A 6WDFN Supplier Device Package: 6-WDFN (2x2) Vgs(th) (Max) @ Id: 800mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V Current - Continuous Drain (Id) @ 25°C: 2.4A Drain to Source Voltage (Vdss): 12V Power - Max: 700mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTLJD2104PTBG |
|
Hersteller: onsemi
Description: MOSFET 2P-CH 12V 2.4A 6WDFN
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 800mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Drain to Source Voltage (Vdss): 12V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 12V 2.4A 6WDFN
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 800mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Drain to Source Voltage (Vdss): 12V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH