NTLJD3181PZTAG onsemi
Hersteller: onsemiDescription: MOSFET 2P-CH 20V 2.2A 6WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1211+ | 0.41 EUR |
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Technische Details NTLJD3181PZTAG onsemi
Description: MOSFET 2P-CH 20V 2.2A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 710mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.2A, Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-WDFN (2x2).
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NTLJD3181PZTAG | Hersteller : onsemi |
Description: MOSFET 2P-CH 20V 2.2A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) |
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