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NTLJS7D2P02P8ZTAG

NTLJS7D2P02P8ZTAG onsemi

ntljs7d2p02p8z-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 20V 7.9A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
auf Bestellung 270000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.9 EUR
6000+ 0.85 EUR
9000+ 0.81 EUR
Mindestbestellmenge: 3000
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Technische Details NTLJS7D2P02P8ZTAG onsemi

Description: MOSFET P-CH 20V 7.9A 6PQFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V, Power Dissipation (Max): 860mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-PQFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V.

Weitere Produktangebote NTLJS7D2P02P8ZTAG nach Preis ab 0.79 EUR bis 2.16 EUR

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NTLJS7D2P02P8ZTAG NTLJS7D2P02P8ZTAG Hersteller : onsemi NTLJS7D2P02P8Z_D-2318851.pdf MOSFET PT8 20V WDFN POWER CLIP
auf Bestellung 5514 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.01 EUR
32+ 1.65 EUR
100+ 1.28 EUR
500+ 1.09 EUR
1000+ 0.89 EUR
3000+ 0.83 EUR
6000+ 0.79 EUR
Mindestbestellmenge: 26
NTLJS7D2P02P8ZTAG NTLJS7D2P02P8ZTAG Hersteller : onsemi ntljs7d2p02p8z-d.pdf Description: MOSFET P-CH 20V 7.9A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
auf Bestellung 276899 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.16 EUR
15+ 1.77 EUR
100+ 1.38 EUR
500+ 1.17 EUR
1000+ 0.95 EUR
Mindestbestellmenge: 13
NTLJS7D2P02P8ZTAG Hersteller : ON Semiconductor ntljs7d2p02p8z-d.pdf 20 V Single P Channel MOSFET
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