NTLJS7D2P02P8ZTAG onsemi
Hersteller: onsemi
Description: MOSFET P-CH 20V 7.9A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
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Technische Details NTLJS7D2P02P8ZTAG onsemi
Description: MOSFET P-CH 20V 7.9A 6PQFN, Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 6-PQFN (2x2), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 860mW (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTLJS7D2P02P8ZTAG nach Preis ab 0.5 EUR bis 2.31 EUR
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NTLJS7D2P02P8ZTAG | onsemi |
MOSFETs PT8 20V WDFN POWER CLIP |
auf Bestellung 3634 Stücke: Lieferzeit 10-14 Tag (e) |
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NTLJS7D2P02P8ZTAG | onsemi |
Description: MOSFET P-CH 20V 7.9A 6PQFN Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V |
auf Bestellung 36114 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTLJS7D2P02P8ZTAG |
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Hersteller: onsemi
MOSFETs PT8 20V WDFN POWER CLIP
MOSFETs PT8 20V WDFN POWER CLIP
auf Bestellung 3634 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.74 EUR |
| 10+ | 1.16 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.56 EUR |
| 3000+ | 0.5 EUR |
| NTLJS7D2P02P8ZTAG |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 7.9A 6PQFN
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
Description: MOSFET P-CH 20V 7.9A 6PQFN
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
auf Bestellung 36114 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.31 EUR |
| 13+ | 1.46 EUR |
| 100+ | 0.97 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.69 EUR |