Technische Details NTLUS3A18PZCTCG ON Semiconductor
Description: MOSFET P-CH 20V 5.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-UDFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V.
Weitere Produktangebote NTLUS3A18PZCTCG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NTLUS3A18PZCTCG | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 20V 8.2A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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NTLUS3A18PZCTCG | Hersteller : onsemi |
Description: MOSFET P-CH 20V 5.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V |
Produkt ist nicht verfügbar |