NTMD6N04R2G
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auf Bestellung 43 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details NTMD6N04R2G
Description: MOSFET 2N-CH 40V 4.6A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V, Current - Continuous Drain (Id) @ 25°C: 4.6A, Drain to Source Voltage (Vdss): 40V, Power - Max: 1.29W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote NTMD6N04R2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NTMD6N04R2G | onsemi |
Description: MOSFET 2N-CH 40V 4.6A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V Current - Continuous Drain (Id) @ 25°C: 4.6A Drain to Source Voltage (Vdss): 40V Power - Max: 1.29W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
NTMD6N04R2G | onsemi |
Description: MOSFET 2N-CH 40V 4.6A 8SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V Current - Continuous Drain (Id) @ 25°C: 4.6A Drain to Source Voltage (Vdss): 40V Power - Max: 1.29W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
NTMD6N04R2G | onsemi |
MOSFET NFET SO8 40V 5.8A 0.027R |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTMD6N04R2G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 4.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.29W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 4.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.29W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMD6N04R2G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 4.6A 8SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.29W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 40V 4.6A 8SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.29W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMD6N04R2G |
|
Hersteller: onsemi
MOSFET NFET SO8 40V 5.8A 0.027R
MOSFET NFET SO8 40V 5.8A 0.027R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH