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NTMFC013NP10M5L

NTMFC013NP10M5L onsemi

ntmfc013np10m5l-d.pdf Hersteller: onsemi
Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
auf Bestellung 2605 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5 EUR
10+3.53 EUR
100+2.47 EUR
500+2.15 EUR
Mindestbestellmenge: 4
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Technische Details NTMFC013NP10M5L onsemi

Description: MOSFET N/P-CH 100V 9A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.7W (Ta), 102W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V, Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA, Supplier Device Package: 8-WDFN (5x6).

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NTMFC013NP10M5L Hersteller : onsemi NTMFC013NP10M5L_D-3150326.pdf MOSFETs MOSFET - Power, Dual N- & P-Channel, SO8FL, 100 V, 13.4 mohm, 60 A, -100 V, 32 mohm, -36 A MOSFET - Power, Dual N- & P-Channel, SO8FL, 100 V, 13.4 mohm, 60 A, -100 V, 32 mohm, -36 A
auf Bestellung 2840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.05 EUR
10+3.75 EUR
100+2.62 EUR
500+2.13 EUR
1000+1.99 EUR
3000+1.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTMFC013NP10M5L NTMFC013NP10M5L Hersteller : onsemi ntmfc013np10m5l-d.pdf Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
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Im Einkaufswagen  Stück im Wert von  UAH