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NTMFD020N06CT1G

NTMFD020N06CT1G onsemi

ntmfd020n06c-d.pdf Hersteller: onsemi
MOSFETs Power MOSFET Power, N-Channel, DUAL SO8FL, 60 V, 20.3 mohm, 27 A
auf Bestellung 778 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.60 EUR
10+1.78 EUR
100+1.24 EUR
500+1.01 EUR
1500+0.91 EUR
Mindestbestellmenge: 2
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Technische Details NTMFD020N06CT1G onsemi

Description: MOSFET 2N-CH 60V 8A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 31W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 27A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 30V, Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Part Status: Active.

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NTMFD020N06CT1G NTMFD020N06CT1G Hersteller : onsemi ntmfd020n06c-d.pdf Description: MOSFET 2N-CH 60V 8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 30V
Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
auf Bestellung 1170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.75 EUR
10+1.90 EUR
100+1.31 EUR
500+1.07 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NTMFD020N06CT1G NTMFD020N06CT1G Hersteller : onsemi ntmfd020n06c-d.pdf Description: MOSFET 2N-CH 60V 8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 30V
Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
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Im Einkaufswagen  Stück im Wert von  UAH