Technische Details NTMFD4902NFT3G ON Semiconductor
Description: MOSFET 2N-CH 30V 10.3A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Schottky, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, 1.16W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A, Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical).
Weitere Produktangebote NTMFD4902NFT3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTMFD4902NFT3G | onsemi |
Description: MOSFET 2N-CH 30V 10.3A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W, 1.16W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NTMFD4902NFT3G | ON Semiconductor |
MOSFET NFET SO8FL 30V 10.8A 7MO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFD4902NFT3G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 10.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W, 1.16W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Description: MOSFET 2N-CH 30V 10.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W, 1.16W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFD4902NFT3G |
![]() |
Hersteller: ON Semiconductor
MOSFET NFET SO8FL 30V 10.8A 7MO
MOSFET NFET SO8FL 30V 10.8A 7MO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

