NTMFD4C86NT3G onsemi

Description: MOSFET 2N-CH 30V 11.3A 8DFN, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V, Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A, Drain to Source Voltage (Vdss): 30V.