NTMFS002P03P8ZT1G onsemi

Description: MOSFET, POWER -30V P-CHANNEL, SO, Rds On (Max) @ Id, Vgs: 1.4mOhm @ 23A, 10V, Current - Continuous Drain (Id) @ 25°C: 40.2A (Ta), 263A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 14950 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 217 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.3W (Ta), 138.9W (Tc).