
NTMFS0D5N04XLT1G onsemi

MOSFETs Power MOSFET, Single, N-Channel, 40V, 0.49mohm, 455A, SO8-FL 5x6 Power MOSFET, Single, N-Channel, 40V, 0.49m ohms, Logic Level, SO8-FL 5x6
auf Bestellung 1280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 7.73 EUR |
10+ | 5.32 EUR |
25+ | 5.26 EUR |
100+ | 3.80 EUR |
500+ | 3.15 EUR |
1000+ | 3.13 EUR |
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Technische Details NTMFS0D5N04XLT1G onsemi
Description: 40V T10S IN S08FL HEFET GEN 2 PA, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 455A (Tc), Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V, Power Dissipation (Max): 194W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 330µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9444 pF @ 20 V.
Weitere Produktangebote NTMFS0D5N04XLT1G nach Preis ab 3.82 EUR bis 7.94 EUR
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NTMFS0D5N04XLT1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 455A (Tc) Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 330µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9444 pF @ 20 V |
auf Bestellung 337 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS0D5N04XLT1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NTMFS0D5N04XLT1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 455A (Tc) Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 330µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9444 pF @ 20 V |
Produkt ist nicht verfügbar |