auf Bestellung 1240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.72 EUR |
| 10+ | 4.4 EUR |
| 100+ | 3.31 EUR |
| 500+ | 2.97 EUR |
| 1500+ | 2.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMFS0D5N04XLT1G onsemi
Description: 40V T10S IN S08FL HEFET GEN 2 PA, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 455A (Tc), Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V, Power Dissipation (Max): 194W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 330µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9444 pF @ 20 V.
Weitere Produktangebote NTMFS0D5N04XLT1G nach Preis ab 3.82 EUR bis 7.94 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTMFS0D5N04XLT1G | Hersteller : onsemi |
 Description: 40V T10S IN S08FL HEFET GEN 2 PAPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 455A (Tc) Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 330µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9444 pF @ 20 V |
auf Bestellung 337 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
NTMFS0D5N04XLT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 455A 5-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||
|
|
NTMFS0D5N04XLT1G | Hersteller : onsemi |
Description: 40V T10S IN S08FL HEFET GEN 2 PA Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 455A (Tc) Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 330µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9444 pF @ 20 V |
Produkt ist nicht verfügbar |