
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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37+ | 3.98 EUR |
53+ | 2.67 EUR |
67+ | 2.04 EUR |
100+ | 1.70 EUR |
250+ | 1.47 EUR |
500+ | 1.24 EUR |
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Technische Details NTMFS0D6N04XMT1G ON Semiconductor
Description: 40V T10M IN S08FL HEFET GEN 2 PA, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 380A (Tc), Rds On (Max) @ Id, Vgs: 0.57mOhm @ 30A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 210µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 86.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5574 pF @ 20 V.
Weitere Produktangebote NTMFS0D6N04XMT1G nach Preis ab 1.24 EUR bis 4.59 EUR
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NTMFS0D6N04XMT1G | Hersteller : ON Semiconductor |
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auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMFS0D6N04XMT1G | Hersteller : onsemi |
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auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS0D6N04XMT1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 380A (Tc) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 30A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5574 pF @ 20 V |
auf Bestellung 1455 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS0D6N04XMT1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NTMFS0D6N04XMT1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 380A (Tc) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 30A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5574 pF @ 20 V |
Produkt ist nicht verfügbar |