| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.89 EUR |
| 10+ | 3.8 EUR |
| 100+ | 2.73 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.12 EUR |
| 1500+ | 1.96 EUR |
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Technische Details NTMFS0D6N04XMT1G onsemi
Description: 40V T10M IN S08FL HEFET GEN 2 PA, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 380A (Tc), Rds On (Max) @ Id, Vgs: 0.57mOhm @ 30A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 210µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 86.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5574 pF @ 20 V.
Weitere Produktangebote NTMFS0D6N04XMT1G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
NTMFS0D6N04XMT1G | onsemi |
 Description: 40V T10M IN S08FL HEFET GEN 2 PAPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 380A (Tc) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 30A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5574 pF @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
NTMFS0D6N04XMT1G | onsemi |
Description: 40V T10M IN S08FL HEFET GEN 2 PA Input Capacitance (Ciss) (Max) @ Vds: 5574 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 86.4 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 3.5V @ 210µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 380A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFS0D6N04XMT1G |
|
Hersteller: onsemi
Description: 40V T10M IN S08FL HEFET GEN 2 PA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5574 pF @ 20 V
Description: 40V T10M IN S08FL HEFET GEN 2 PA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5574 pF @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS0D6N04XMT1G |
|
Hersteller: onsemi
Description: 40V T10M IN S08FL HEFET GEN 2 PA
Input Capacitance (Ciss) (Max) @ Vds: 5574 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 86.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: 40V T10M IN S08FL HEFET GEN 2 PA
Input Capacitance (Ciss) (Max) @ Vds: 5574 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 86.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH