NTMFS0D7N03CGT1G ON Semiconductor
auf Bestellung 74770 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 181+ | 3 EUR |
| 500+ | 2.75 EUR |
| 1000+ | 2.5 EUR |
| 10000+ | 2.26 EUR |
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Technische Details NTMFS0D7N03CGT1G ON Semiconductor
Description: MOSFET N-CH 30V 59A/409A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 59A (Ta), 409A (Tc), Rds On (Max) @ Id, Vgs: 0.65mOhm @ 30A, 10V, Power Dissipation (Max): 4W (Ta), 187W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 280µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 15 V.
Weitere Produktangebote NTMFS0D7N03CGT1G nach Preis ab 3 EUR bis 3 EUR
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NTMFS0D7N03CGT1G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 30V 59A 5-Pin SO-FL EP T/R |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTMFS0D7N03CGT1G | Hersteller : ON Semiconductor |
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auf Bestellung 1450 Stücke: Lieferzeit 21-28 Tag (e) |
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NTMFS0D7N03CGT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 59A 5-Pin SO-FL EP T/R |
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NTMFS0D7N03CGT1G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 59A/409A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Ta), 409A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 30A, 10V Power Dissipation (Max): 4W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 280µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 15 V |
Produkt ist nicht verfügbar |
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NTMFS0D7N03CGT1G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 59A/409A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Ta), 409A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 30A, 10V Power Dissipation (Max): 4W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 280µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 15 V |
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NTMFS0D7N03CGT1G | Hersteller : onsemi |
MOSFETs WIDE SOA |
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| NTMFS0D7N03CGT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 409A; Idm: 900A; 187W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 147nC On-state resistance: 0.65mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 187W Drain current: 409A Case: DFN5 Pulsed drain current: 900A Kind of channel: enhancement |
Produkt ist nicht verfügbar |