NTMFS3D2N10MDT1G onsemi
Hersteller: onsemi
Description: PTNG 100V LOW Q3.2MOHM N-FET, HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 142A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 316µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 50 V
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Technische Details NTMFS3D2N10MDT1G onsemi
Description: PTNG 100V LOW Q3.2MOHM N-FET, HE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 142A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V, Power Dissipation (Max): 2.8W (Ta), 155W (Tc), Vgs(th) (Max) @ Id: 4V @ 316µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 71.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 50 V.
Weitere Produktangebote NTMFS3D2N10MDT1G nach Preis ab 3.12 EUR bis 8.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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NTMFS3D2N10MDT1G | onsemi |
MOSFET N-Channel Shielded Gate PowerTrench MOSFET 100V, 142A, 3.2mohm N-Channel Shielded Gate PowerTrench MOSFET 100V, 142A, 3.5mohm |
auf Bestellung 1587 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS3D2N10MDT1G | onsemi |
Description: PTNG 100V LOW Q3.2MOHM N-FET, HE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 142A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 155W (Tc) Vgs(th) (Max) @ Id: 4V @ 316µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 50 V |
auf Bestellung 4095 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS3D2N10MDT1G | ON Semiconductor |
Trans MOSFET N-CH 100V 19A 5-Pin SO-FL EP T/R |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTMFS3D2N10MDT1G | ON Semiconductor |
Trans MOSFET N-CH 100V 19A 5-Pin SO-FL EP T/R |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NTMFS3D2N10MDT1G |
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Hersteller: onsemi
MOSFET N-Channel Shielded Gate PowerTrench MOSFET 100V, 142A, 3.2mohm N-Channel Shielded Gate PowerTrench MOSFET 100V, 142A, 3.5mohm
MOSFET N-Channel Shielded Gate PowerTrench MOSFET 100V, 142A, 3.2mohm N-Channel Shielded Gate PowerTrench MOSFET 100V, 142A, 3.5mohm
auf Bestellung 1587 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.06 EUR |
| 10+ | 5.09 EUR |
| 25+ | 4.82 EUR |
| 100+ | 4.13 EUR |
| 250+ | 3.89 EUR |
| 500+ | 3.67 EUR |
| 1000+ | 3.14 EUR |
| NTMFS3D2N10MDT1G |
|
Hersteller: onsemi
Description: PTNG 100V LOW Q3.2MOHM N-FET, HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 142A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 316µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 50 V
Description: PTNG 100V LOW Q3.2MOHM N-FET, HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 142A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 316µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 50 V
auf Bestellung 4095 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.19 EUR |
| 10+ | 5.39 EUR |
| 100+ | 3.8 EUR |
| 500+ | 3.12 EUR |
| NTMFS3D2N10MDT1G |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 19A 5-Pin SO-FL EP T/R
Trans MOSFET N-CH 100V 19A 5-Pin SO-FL EP T/R
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| NTMFS3D2N10MDT1G |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 19A 5-Pin SO-FL EP T/R
Trans MOSFET N-CH 100V 19A 5-Pin SO-FL EP T/R
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)