Technische Details NTMFS4833NT3G ON Semiconductor
Description: MOSFET N-CH 30V 16A/156A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V, Power Dissipation (Max): 910mW (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 11.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 12 V.
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTMFS4833NT3G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 28A 5-Pin(4+Tab) SO-FL T/R |
Produkt ist nicht verfügbar |
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NTMFS4833NT3G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 16A/156A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 910mW (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 12 V |
Produkt ist nicht verfügbar |