NTMFS4839NHT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.5A/64A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2354 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 11.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 1025+ | 0.48 EUR |
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Technische Details NTMFS4839NHT1G onsemi
Description: MOSFET N-CH 30V 9.5A/64A 5DFN, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2354 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 11.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 870mW (Ta), 42.4W (Tc).
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auf Bestellung 1817 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFS4839NHT1G |
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auf Bestellung 1817 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
