NTMFS4847NAT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 11.5A/85A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 12 V
| Anzahl | Preis |
|---|---|
| 919+ | 0.52 EUR |
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Technische Details NTMFS4847NAT1G onsemi
Description: MOSFET N-CH 30V 11.5A/85A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 880mW (Ta), 48.4W (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTMFS4847NAT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
|---|---|---|---|---|---|
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NTMFS4847NAT1G | onsemi |
Description: MOSFET N-CH 30V 11.5A/85A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 880mW (Ta), 48.4W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFS4847NAT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 11.5A/85A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 11.5A/85A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH