NTMFS4898NFT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V SO-8FL
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 117A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 12 V
Description: MOSFET N-CH 30V SO-8FL
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 117A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 12 V
auf Bestellung 23815 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 460+ | 1.07 EUR |
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Technische Details NTMFS4898NFT1G onsemi
Description: MOSFET N-CH 30V SO-8FL, Packaging: Cut Tape (CT), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 117A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 49.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 12 V.
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Preis |
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| NTMFS4898NFT1G | Hersteller : ON Semiconductor |
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NTMFS4898NFT1G | Hersteller : ON Semiconductor |
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NTMFS4898NFT1G | Hersteller : onsemi |
Description: MOSFET N-CH 30V SO-8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 117A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 49.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 12 V |
Produkt ist nicht verfügbar |