Technische Details NTMFS4934NT1G onsemi
Description: MOSFET N-CH 30V 17.1A/147A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V, Power Dissipation (Max): 930mW (Ta), 69.44W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5505 pF @ 15 V.
Weitere Produktangebote NTMFS4934NT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTMFS4934NT1G | Hersteller : ONSEMI |
 Description: ONSEMI - NTMFS4934NT1G - MOSFET, N-CH, 30V, 147A, SOIC-FLtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2101 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTMFS4934NT1G | Hersteller : On Semiconductor |
MOSFET N-CH 30V 147A SO-8 FL |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMFS4934NT1G Produktcode: 133664 |
IC > IC Speicher |
Produkt ist nicht verfügbar
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NTMFS4934NT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 29.1A 5-Pin(4+Tab) SO-FL T/R |
Produkt ist nicht verfügbar |
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NTMFS4934NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 17.1A/147A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 930mW (Ta), 69.44W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5505 pF @ 15 V |
Produkt ist nicht verfügbar |