NTMFS4943NT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.3A/41A 5DFN
Packaging: Bulk
Power Dissipation (Max): 910mW (Ta), 22.3W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
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Technische Details NTMFS4943NT1G onsemi
Description: MOSFET N-CH 30V 8.3A/41A 5DFN, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 41A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 910mW (Ta), 22.3W (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 30A, 10V.
Weitere Produktangebote NTMFS4943NT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NTMFS4943NT1G | ON Semiconductor |
|
auf Bestellung 318 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFS4943NT1G |
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Hersteller: ON Semiconductor
auf Bestellung 318 Stücke:
Lieferzeit 21-28 Tag (e)

