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NTMFS4946NT1G

NTMFS4946NT1G onsemi


ntmfs4946n-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 30V 12.7A/100A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 12 V
auf Bestellung 2886 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
547+0.85 EUR
Mindestbestellmenge: 547
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Technische Details NTMFS4946NT1G onsemi

Description: MOSFET N-CH 30V 12.7A/100A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V, Power Dissipation (Max): 890mW (Ta), 55.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 11.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 12 V.

Weitere Produktangebote NTMFS4946NT1G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NTMFS4946NT1G NTMFS4946NT1G Hersteller : ON Semiconductor NTMFS4946N_D-1814189.pdf MOSFET NFET SO8FL 30V TR
auf Bestellung 1495 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4946NT1G NTMFS4946NT1G Hersteller : ONSEMI ONSM-S-A0013300191-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NTMFS4946NT1G - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.009 ohm, DFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 24.6W
Bauform - Transistor: DFN
Anzahl der Pins: 5Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.009ohm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1386 Stücke:
Lieferzeit 14-21 Tag (e)
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NTMFS4946NT1G ntmfs4946n-d.pdf
auf Bestellung 109500 Stücke:
Lieferzeit 21-28 Tag (e)
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NTMFS4946NT1G NTMFS4946NT1G Hersteller : onsemi ntmfs4946n-d.pdf Description: MOSFET N-CH 30V 12.7A/100A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 12 V
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