NTMFS4983NFT1G ON Semiconductor

Description: MOSFET N-CH 30V 22A/106A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 47.9 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Power Dissipation (Max): 1.7W (Ta), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 106A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).