
NTMFS4985NFT1G onsemi

Description: MOSFET N-CH 30V 17.5A/65A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 1.63W (Ta), 22.73W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
auf Bestellung 1258 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
8+ | 2.25 EUR |
10+ | 1.84 EUR |
100+ | 1.43 EUR |
500+ | 1.21 EUR |
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Technische Details NTMFS4985NFT1G onsemi
Description: MOSFET N-CH 30V 17.5A/65A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V, Power Dissipation (Max): 1.63W (Ta), 22.73W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V.
Weitere Produktangebote NTMFS4985NFT1G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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NTMFS4985NFT1G | Hersteller : ON Semiconductor |
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auf Bestellung 915 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4985NFT1G | Hersteller : ON Semiconductor |
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auf Bestellung 1295 Stücke: Lieferzeit 21-28 Tag (e) |
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NTMFS4985NFT1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 1.63W (Ta), 22.73W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
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