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NTMFS4C029NT3G

NTMFS4C029NT3G onsemi

ntmfs4c029n-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 30V 15A/46A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V
Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
auf Bestellung 4959 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+2.00 EUR
100+1.35 EUR
500+1.07 EUR
1000+0.98 EUR
2000+0.90 EUR
Mindestbestellmenge: 6
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Technische Details NTMFS4C029NT3G onsemi

Description: MOSFET N-CH 30V 15A/46A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V, Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V.

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NTMFS4C029NT3G NTMFS4C029NT3G Hersteller : onsemi NTMFS4C029N_D-2318829.pdf MOSFET TRENCH 6 30V NCH
auf Bestellung 14994 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C029NT3G NTMFS4C029NT3G Hersteller : onsemi ntmfs4c029n-d.pdf Description: MOSFET N-CH 30V 15A/46A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V
Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
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