NTMFS4C03NT1G ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 190+ | 0.94 EUR |
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Technische Details NTMFS4C03NT1G ON Semiconductor
Description: MOSFET N-CH 30V 30A/136A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V, Power Dissipation (Max): 3.1W (Ta), 64W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V.
Weitere Produktangebote NTMFS4C03NT1G nach Preis ab 0.92 EUR bis 3.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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NTMFS4C03NT1G | onsemi |
 Description: MOSFET N-CH 30V 30A/136A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4C03NT1G | ON Semiconductor |
Trans MOSFET N-CH 30V 30A 5-Pin SO-FL EP T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMFS4C03NT1G | ON Semiconductor |
Trans MOSFET N-CH 30V 30A 5-Pin SO-FL EP T/R |
auf Bestellung 100500 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMFS4C03NT1G | onsemi |
MOSFETs NFET SO8FL 30V 138A 2.1MO |
auf Bestellung 5760 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4C03NT1G | onsemi |
Description: MOSFET N-CH 30V 30A/136A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V |
auf Bestellung 3624 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMFS4C03NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.94 EUR |
| NTMFS4C03NT1G |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 30A 5-Pin SO-FL EP T/R
Trans MOSFET N-CH 30V 30A 5-Pin SO-FL EP T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 681+ | 0.98 EUR |
| 1000+ | 0.92 EUR |
| NTMFS4C03NT1G |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 30A 5-Pin SO-FL EP T/R
Trans MOSFET N-CH 30V 30A 5-Pin SO-FL EP T/R
auf Bestellung 100500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 681+ | 0.98 EUR |
| 1000+ | 0.92 EUR |
| NTMFS4C03NT1G |
|
Hersteller: onsemi
MOSFETs NFET SO8FL 30V 138A 2.1MO
MOSFETs NFET SO8FL 30V 138A 2.1MO
auf Bestellung 5760 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.32 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 1.02 EUR |
| 1500+ | 0.92 EUR |
| NTMFS4C03NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
auf Bestellung 3624 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.44 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.15 EUR |