NTMFS4C06NBT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 20A/69A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.33 EUR |
| 10+ | 2.13 EUR |
| 50+ | 1.61 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.13 EUR |
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Technische Details NTMFS4C06NBT1G onsemi
Description: MOSFET N-CH 30V 20A/69A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V, Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V.
Weitere Produktangebote NTMFS4C06NBT1G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| NTMFS4C06NBT1G | ON Semiconductor |
auf Bestellung 8900 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFS4C06NBT1G |
Hersteller: ON Semiconductor
auf Bestellung 8900 Stücke:
Lieferzeit 21-28 Tag (e)

