| Anzahl | Preis |
|---|---|
| 2+ | 2.27 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.88 EUR |
| 1500+ | 0.86 EUR |
| 3000+ | 0.85 EUR |
| 24000+ | 0.84 EUR |
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Technische Details NTMFS4C09NBT1G onsemi
Description: MOSFET N-CH 30V SO8FL, Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V, Drain to Source Voltage (Vdss): 30 V, Part Status: Active, Power Dissipation (Max): 760mW (Ta), 25.5W (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc), Package / Case: 8-PowerTDFN, 5 Leads.
Weitere Produktangebote NTMFS4C09NBT1G nach Preis ab 0.86 EUR bis 2.6 EUR
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NTMFS4C09NBT1G | onsemi |
Description: MOSFET N-CH 30V SO8FL Part Status: Active Power Dissipation (Max): 760mW (Ta), 25.5W (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.1V @ 250µA Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc) Package / Case: 8-PowerTDFN, 5 Leads |
auf Bestellung 1395 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMFS4C09NBT1G | ON Semiconductor |
auf Bestellung 8660 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFS4C09NBT1G |
Hersteller: onsemi
Description: MOSFET N-CH 30V SO8FL
Part Status: Active
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
Package / Case: 8-PowerTDFN, 5 Leads
Description: MOSFET N-CH 30V SO8FL
Part Status: Active
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
Package / Case: 8-PowerTDFN, 5 Leads
auf Bestellung 1395 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.6 EUR |
| 11+ | 1.65 EUR |
| 100+ | 1.1 EUR |
| 500+ | 0.86 EUR |
| NTMFS4C09NBT1G |
Hersteller: ON Semiconductor
auf Bestellung 8660 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH