auf Bestellung 1365 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.27 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.88 EUR |
| 1500+ | 0.86 EUR |
| 3000+ | 0.85 EUR |
| 24000+ | 0.84 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMFS4C09NBT1G onsemi
Description: MOSFET N-CH 30V SO8FL, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Power Dissipation (Max): 760mW (Ta), 25.5W (Tc), Part Status: Active, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V, Package / Case: 8-PowerTDFN, 5 Leads, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V.
Weitere Produktangebote NTMFS4C09NBT1G nach Preis ab 0.64 EUR bis 2.60 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTMFS4C09NBT1G | Hersteller : onsemi |
Description: MOSFET N-CH 30V SO8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 760mW (Ta), 25.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V |
auf Bestellung 1395 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| NTMFS4C09NBT1G | Hersteller : ON Semiconductor | NFET SO8FL 30V 52A 5.8M Ohm |
auf Bestellung 19500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
| NTMFS4C09NBT1G | Hersteller : ON Semiconductor | NFET SO8FL 30V 52A 5.8M Ohm |
auf Bestellung 19500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
| NTMFS4C09NBT1G | Hersteller : ON Semiconductor | NFET SO8FL 30V 52A 5.8M Ohm |
auf Bestellung 10500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
| NTMFS4C09NBT1G | Hersteller : ON Semiconductor | NFET SO8FL 30V 52A 5.8M Ohm |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
| NTMFS4C09NBT1G | Hersteller : ON Semiconductor |
auf Bestellung 8660 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||
| NTMFS4C09NBT1G | Hersteller : ON Semiconductor |
 NFET SO8FL 30V 52A 5.8M Ohm |
Produkt ist nicht verfügbar |
||||||||||||
|
|
NTMFS4C09NBT1G | Hersteller : onsemi |
Description: MOSFET N-CH 30V SO8FL Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Power Dissipation (Max): 760mW (Ta), 25.5W (Tc) Part Status: Active Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V Package / Case: 8-PowerTDFN, 5 Leads Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V |
Produkt ist nicht verfügbar |