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NTMFS4D0N08XT1G onsemi


ntmfs4d0n08x-d.pdf
Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.01 EUR
3000+0.94 EUR
4500+0.9 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTMFS4D0N08XT1G onsemi

Description: T10 80V STD NCH MOSFET SO8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 119A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 133µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V.

Weitere Produktangebote NTMFS4D0N08XT1G nach Preis ab 1.04 EUR bis 3.81 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NTMFS4D0N08XT1G NTMFS4D0N08XT1G onsemi ntmfs4d0n08x-d.pdf Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
auf Bestellung 5123 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.42 EUR
10+2.18 EUR
100+1.46 EUR
500+1.17 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4D0N08XT1G NTMFS4D0N08XT1G onsemi ntmfs4d0n08x-d.pdf MOSFETs T10 80V STD NCH MOSFET SO8FL
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.81 EUR
10+2.39 EUR
100+1.59 EUR
500+1.26 EUR
1000+1.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4D0N08XT1G ntmfs4d0n08x-d.pdf
Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
auf Bestellung 5123 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.42 EUR
10+2.18 EUR
100+1.46 EUR
500+1.17 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4D0N08XT1G ntmfs4d0n08x-d.pdf
Hersteller: onsemi
MOSFETs T10 80V STD NCH MOSFET SO8FL
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3.81 EUR
10+2.39 EUR
100+1.59 EUR
500+1.26 EUR
1000+1.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH