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NTMFS6H852NLT1G

NTMFS6H852NLT1G onsemi

ntmfs6h852nl-d.pdf Hersteller: onsemi
MOSFETs T8 80V LL SO8FL
auf Bestellung 3921 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.64 EUR
10+1.26 EUR
100+0.86 EUR
500+0.72 EUR
1000+0.61 EUR
1500+0.55 EUR
3000+0.52 EUR
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Technische Details NTMFS6H852NLT1G onsemi

Description: MOSFET N-CH 80V 11A/42A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V, Power Dissipation (Max): 3.6W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2V @ 45µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V.

Weitere Produktangebote NTMFS6H852NLT1G nach Preis ab 0.63 EUR bis 1.95 EUR

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NTMFS6H852NLT1G NTMFS6H852NLT1G Hersteller : onsemi ntmfs6h852nl-d.pdf Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
auf Bestellung 1492 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
15+1.23 EUR
100+0.81 EUR
500+0.63 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H852NLT1G Hersteller : ON Semiconductor ntmfs6h852nl-d.pdf Power, Single N-Channel MOSFET
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NTMFS6H852NLT1G NTMFS6H852NLT1G Hersteller : ON Semiconductor ntmfs6h852nl-d.pdf Power, Single N-Channel MOSFET
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NTMFS6H852NLT1G NTMFS6H852NLT1G Hersteller : onsemi ntmfs6h852nl-d.pdf Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
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NTMFS6H852NLT1G Hersteller : ONSEMI ntmfs6h852nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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