auf Bestellung 1754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.82 EUR |
| 10+ | 2.43 EUR |
| 100+ | 1.66 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.22 EUR |
| 3000+ | 1.13 EUR |
| 6000+ | 1.09 EUR |
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Technische Details NTMFSC2D6N08XTWG onsemi
Description: MOSFET - POWERTRENCH T10, SINGLE, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 154A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V, Power Dissipation (Max): 133W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 184µA, Supplier Device Package: 8-DFN (5x6.15), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V.
Weitere Produktangebote NTMFSC2D6N08XTWG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTMFSC2D6N08XTWG | Hersteller : onsemi |
 Description: MOSFET - POWERTRENCH T10, SINGLEPackaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 154A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 184µA Supplier Device Package: 8-DFN (5x6.15) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V |
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