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NTMFSCH1D4N08XTWG

NTMFSCH1D4N08XTWG onsemi

ntmfsch1d4n08x-d.pdf
Hersteller: onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 263A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6303 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 348µA
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Technische Details NTMFSCH1D4N08XTWG onsemi

Description: MOSFET - POWER, SINGLEN-CHANNEL,, Power Dissipation (Max): 208W (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 263A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 6303 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 3.6V @ 348µA.

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NTMFSCH1D4N08XTWG NTMFSCH1D4N08XTWG onsemi ntmfsch1d4n08x-d.pdf Description: MOSFET - POWER, SINGLEN-CHANNEL,
Input Capacitance (Ciss) (Max) @ Vds: 6303 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 348µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 263A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NTMFSCH1D4N08XTWG NTMFSCH1D4N08XTWG onsemi ntmfsch1d4n08x-d.pdf MOSFETs MOSFET - Power, Single N-Channel, DUAL COOL, DFN8 5x6, 80 V, 1.4 mohm, 263 A
Produkt ist nicht verfügbar
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NTMFSCH1D4N08XTWG ntmfsch1d4n08x-d.pdf
NTMFSCH1D4N08XTWG
Hersteller: onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Input Capacitance (Ciss) (Max) @ Vds: 6303 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 348µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 263A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFSCH1D4N08XTWG ntmfsch1d4n08x-d.pdf
NTMFSCH1D4N08XTWG
Hersteller: onsemi
MOSFETs MOSFET - Power, Single N-Channel, DUAL COOL, DFN8 5x6, 80 V, 1.4 mohm, 263 A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH