NTMS4816NR2G ON Semiconductor
auf Bestellung 432 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 253+ | 0.57 EUR |
| 254+ | 0.55 EUR |
| 283+ | 0.47 EUR |
| 286+ | 0.45 EUR |
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Technische Details NTMS4816NR2G ON Semiconductor
Description: MOSFET N-CH 30V 6.8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V, Power Dissipation (Max): 780mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V.
Weitere Produktangebote NTMS4816NR2G nach Preis ab 0.42 EUR bis 0.58 EUR
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NTMS4816NR2G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R |
auf Bestellung 432 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMS4816NR2G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMS4816NR2G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 6.8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMS4816NR2G | Hersteller : ON Semiconductor |
MOSFET NFET SO8 30V 11A NCH 0.030R |
auf Bestellung 2004 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMS4816NR2G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMS4816NR2G | Hersteller : ONSEMI |
Description: ONSEMI - NTMS4816NR2G - MOSFET, N CHANNEL, 30V, 9A, SOIC-8 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 106224 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTMS4816NR2G | Hersteller : ON |
09+ |
auf Bestellung 1326 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTMS4816NR2G | Hersteller : ON Semicondu |
2007 |
auf Bestellung 1298 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTMS4816NR2G | Hersteller : ON Semiconductor |
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auf Bestellung 2507 Stücke: Lieferzeit 21-28 Tag (e) |
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NTMS4816NR2G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R |
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NTMS4816NR2G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 6.8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V |
Produkt ist nicht verfügbar |