NTMTSC4D2N10GTXG onsemi
Hersteller: onsemiDescription: 100V MVSOA IN DFNW8(PQFN8X8) PAC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 88A, 10V
Power Dissipation (Max): 3.9W (Ta), 267W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10450 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 4.55 EUR |
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Technische Details NTMTSC4D2N10GTXG onsemi
Description: 100V MVSOA IN DFNW8(PQFN8X8) PAC, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 88A, 10V, Power Dissipation (Max): 3.9W (Ta), 267W (Tc), Vgs(th) (Max) @ Id: 4V @ 450µA, Supplier Device Package: 8-TDFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10450 pF @ 50 V.
Weitere Produktangebote NTMTSC4D2N10GTXG nach Preis ab 5.58 EUR bis 11.02 EUR
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NTMTSC4D2N10GTXG | Hersteller : onsemi |
Description: 100V MVSOA IN DFNW8(PQFN8X8) PAC Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 88A, 10V Power Dissipation (Max): 3.9W (Ta), 267W (Tc) Vgs(th) (Max) @ Id: 4V @ 450µA Supplier Device Package: 8-TDFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10450 pF @ 50 V |
auf Bestellung 8272 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMTSC4D2N10GTXG | Hersteller : ON Semiconductor |
MOSFET-Power Single N-Channel |
Produkt ist nicht verfügbar |
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| NTMTSC4D2N10GTXG | Hersteller : onsemi |
MOSFETs 100V MVSOA IN DFNW8(PQFN8X8) PACKAGE |
Produkt ist nicht verfügbar |