NTMYS013N08LHTWG onsemi
Hersteller: onsemi
Description: T8 80V LL LFPAK
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 45µA
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.33 EUR |
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Technische Details NTMYS013N08LHTWG onsemi
Description: T8 80V LL LFPAK, Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK4 (5x6), Vgs(th) (Max) @ Id: 2V @ 45µA, Power Dissipation (Max): 3.6W (Ta), 54W (Tc).
Weitere Produktangebote NTMYS013N08LHTWG nach Preis ab 1.41 EUR bis 3.68 EUR
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NTMYS013N08LHTWG | onsemi |
MOSFETs T8 80V LL LFPAK |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMYS013N08LHTWG | onsemi |
Description: T8 80V LL LFPAK Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 45µA Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: onsemi
MOSFETs T8 80V LL LFPAK
MOSFETs T8 80V LL LFPAK
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.24 EUR |
| 10+ | 2.71 EUR |
| 100+ | 2.16 EUR |
| 250+ | 1.99 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.63 EUR |
| 3000+ | 1.41 EUR |
| NTMYS013N08LHTWG |
|
Hersteller: onsemi
Description: T8 80V LL LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 45µA
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
Description: T8 80V LL LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 45µA
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.68 EUR |