| Anzahl | Preis |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.45 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.15 EUR |
| 5000+ | 0.14 EUR |
| 8000+ | 0.13 EUR |
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Technische Details NTND31225CZTAG onsemi
Description: MOSFET N/P-CH 20V 0.22A 6XLLGA, Packaging: Tape & Reel (TR), Package / Case: 6-XFLGA, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 125mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 220mA (Ta), 127mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 12.3pF @ 15V, 12.8pF @ 15V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-XLLGA (0.9x0.65), Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NTND31225CZTAG nach Preis ab 0.17 EUR bis 0.74 EUR
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NTND31225CZTAG | onsemi |
 Description: MOSFET N/P-CH 20V 0.22A 6XLLGAPackaging: Cut Tape (CT) Package / Case: 6-XFLGA Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 125mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta), 127mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 12.3pF @ 15V, 12.8pF @ 15V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-XLLGA (0.9x0.65) Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTND31225CZTAG | ON Semiconductor |
|
auf Bestellung 15433 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTND31225CZTAG |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 0.22A 6XLLGA
Packaging: Cut Tape (CT)
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta), 127mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 12.3pF @ 15V, 12.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-XLLGA (0.9x0.65)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 0.22A 6XLLGA
Packaging: Cut Tape (CT)
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta), 127mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 12.3pF @ 15V, 12.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-XLLGA (0.9x0.65)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 39+ | 0.45 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.17 EUR |
| NTND31225CZTAG |
|
Hersteller: ON Semiconductor
auf Bestellung 15433 Stücke:
Lieferzeit 21-28 Tag (e)